The valence electrons, which are very loosely attached to the nucleus, are known as free electrons.
It is diagram drawn between interatomic spacing along the X-axis and the band energy along the Y-axis.
The resistance offered by the diode in its forward biased condition when a voltage is given is called forward resistance.
Semiconductor in an extremely pure form is called intrinsic semiconductor. Its valence shell must be tetravalent in nature.
Semiconductor is a substance has its resistivity in between conductors and insulators. E.g. silicon, Germanium.
The process of adding impurities to an intrinsic semiconductor is called doping.
The power rating of a diode is defined as the maximum value of power that can be dissipated without failure if V f is the forward biased voltage and I f is the forward biased current.
Pd= V f x I f.
The range of energy possessed by valence electron in an atom is called Valence band.
When a reverse biased voltage is given an electron from N-region and holes from P-region moves away from the junction,hence the depletion region formed is very high and hence a small current will be produced due to minority carriers.
The range of energy possessed by conduction electron in an atom is called conduction band.
Material, which does not allow the passage of electric current through them.E.g. Glass, wood, etc.
The branch of engineering which deals with conduction of current through vacuum or gas or a semiconductor.
When a diode is forward biased the current is produced because the holes in the P-region and electron from N-region moves towards the junction. The depletion region formed will be very small hence recombination occurs and current will be produced.
The resistance offered by the diode in its reverse biased condition is called reverse resistance.
The substances, which allow electric current to pass through them, are called conductors. E.g. Copper.
The separation between the conduction band and the valence band on the energy band diagram.
Semiconductor in an impure form is called extrinsic semiconductor.
They are two types
Only after the minority carriers are swept of the junction the diode voltage begins to reverse and the diode current decreases exponentially the time which elapses between and when the diode normally recovered is the called trition time.
When an electric field is applied the charge carriers moves in the opposite direction and produce current this result is drift current and net average velocity is called drift velocity.
This capacitance effect is present when the junction is forward biased it is called diffusion capacitance.
When P-type and N-type are suitably joined together by the conducting surfaces of these two semiconductors is called P-N junction.
When the conduction diode is reverse biased the voltage does not become zero. Immediately up to time t 1 the diode is conducting in the forward direction. The time interval t = t 2 –t1 during which the stored minority carriers reduces to zero is called storage time (t s).
The P-N region on either of the dielectric media act as the plates hence we have components for making a plate capacitor the junction capacitance is called trition capacitance.